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2SD0601A|2SD601A Datasheet

  • 2SD0601A|2SD601A

  • Small-signal device - Small-signal transistor - General-use ...

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Transistors
2SD0601A
(2SD601A)
Silicon NPN epitaxial planar type
For general amplification
Complementary to 2SB0709A (2SB709A)
鈻?/div>
Features
鈥?/div>
High foward current transfer ratio h
FE
鈥?/div>
Low collector to emitter saturation voltage V
CE(sat)
鈥?/div>
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
Unit: mm
0.40
+0.10
鈥?.05
3
1.50
+0.25
鈥?.05
2.8
+0.2
鈥?.3
0.16
+0.10
鈥?.06
1
2
(0.65)
(0.95) (0.95)
1.9
鹵0.1
2.90
+0.20
鈥?.05
鈻?/div>
Absolute Maximum Ratings
T
a
=
25擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
60
50
7
100
200
200
150
鈭?5
to
+150
Unit
V
V
V
mA
mA
mW
擄C
擄C
10藲
1.1
+0.2
鈥?.1
0 to 0.1
1.1
+0.3
鈥?.1
1: Base
2: Emitter
3: Collector
Mini3-G1 Package
Marking Symbol: Z
鈻?/div>
Electrical Characteristics
T
a
=
25擄C
鹵
3擄C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cut-off current (Emitter open)
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
Forward current transfer ratio
h
FE1 *
h
FE2
Collector-emitter saturation voltage
Transition frequency
Noise voltage
Collector output capacitance
(Common base, input open circuited)
V
CE(sat)
f
T
NV
C
ob
Conditions
I
C
=
10
碌A(chǔ),
I
E
=
0
I
C
=
2 mA, I
B
=
0
I
E
=
10
碌A(chǔ),
I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
V
CE
=
10 V, I
C
= 2
mA
V
CE
= 2
V, I
C
=
100 mA
I
C
=
100 mA, I
B
=
10 mA
V
CB
=
10 V, I
E
= 鈭?
mA, f
=
200 MHz
V
CE
=
10 V, I
C
= 1
mA, G
V
=
80 dB
R
g
=
100 k鈩? Function = FLAT
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
3.5
pF
160
90
0.1
150
110
0.3
V
MHz
mV
Min
60
50
7
0.1
100
460
Typ
Max
Unit
V
V
V
碌A(chǔ)
碌A(chǔ)
錚?/div>
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Marking symbol
Q
160 to 260
ZQ
R
210 to 340
ZR
S
290 to 460
ZS
No-rank
160 to 460
Z
Product of no-rank is not classified and have no marking symbol for rank.
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2003
SJC00190BED
0.4
鹵0.2
5藲
1

2SD0601A|2SD601A相關(guān)型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
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    Silicon NPN epitaxial planer type
    PANASONIC
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    金譽
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  • 英文版
    For Medium-Power General Amplification
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    For High Breakdown Voltage General Amplification
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planer type(For high breakdown voltage...
    PANASONIC ...
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC
  • 英文版
    Silicon NPN epitaxial planar type
    PANASONIC ...
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Power Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency Amplification
    PANASONIC
  • 英文版
    For Low-Frequency Amplification
    PANASONIC ...
  • 英文版
    For Low-Frequency And Low-Noise Amplification
    PANASONIC

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